SURFACE DEFECT EFFECTS ON SCHOTTKY BARRIERS

被引：88
|
作者：
WILLIAMS, RH
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词：
D O I：
10.1116/1.570959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：929 / 936
页数：8
相关论文
共 50 条
  • [1] DEFECT COMPLEXES AND SCHOTTKY BARRIERS
    REN, SF
    ALLEN, RE
    SURFACE SCIENCE, 1984, 148 (2-3) : L637 - L640
  • [2] Schottky barriers on GaAs: Screened pinning at defect levels
    Drummond, TJ
    PHYSICAL REVIEW B, 1999, 59 (12): : 8182 - 8194
  • [3] MAGNETIC SURFACE LEVELS IN SCHOTTKY BARRIERS
    CHAPLIK, AV
    SHVARTSMAN, LD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01): : 96 - 97
  • [4] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS
    CROWELL, CR
    ROBERTS, GI
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3726 - &
  • [5] SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS
    ROBERTS, GI
    CROWELL, CR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 455 - &
  • [6] Effects of surface micromesas on reverse leakage current in InGaN/GaN Schottky barriers
    Lu, Wei
    Nishimura, Tomoaki
    Wang, Lingquan
    Nakamura, Tohru
    Yu, Paul K. L.
    Asbeck, Peter M.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (04)
  • [7] RADIATION EFFECTS ON SILICON SCHOTTKY BARRIERS
    YU, AYC
    SNOW, EH
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 220 - +
  • [8] CAPACITANCE-VOLTAGE MEASUREMENTS ON INAS AND PBTE SCHOTTKY BARRIERS - EFFECTS OF INVERTED SURFACE
    NILL, KW
    WALPOLE, JN
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (03): : 434 - &
  • [9] Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers
    Foster, Geoffrey M.
    Gao, Hantian
    Mackessy, Grace
    Hyland, Alana M.
    Allen, Martin W.
    Wang, Buguo
    Look, David C.
    Brillson, Leonard J.
    APPLIED PHYSICS LETTERS, 2017, 111 (10)
  • [10] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS
    ALLEN, RE
    DOW, JD
    PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426
12345