GAALAS/GAAS PLANAR PHOTOCONDUCTORS AND MSM PHOTODETECTORS MONOLITHICALLY INTEGRATED WITH HIGFETS - APPLICATION FOR OPTICAL CLOCK DISTRIBUTION

被引：0

作者：

ABOUDOU, A ^{[1
]}

VILCOT, JP ^{[1
]}

DANNEVILLE, F ^{[1
]}

DECOSTER, D ^{[1
]}

DELHAYE, E ^{[1
]}

BOISSENOT, P ^{[1
]}

VARIN, C ^{[1
]}

DESCHAMPS, F ^{[1
]}

LECURU, I ^{[1
]}

机构：

[1] PHILIPS RES ORG,ELECTR LAB,F-94451 LIMEIL BREVANNES,FRANCE

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1992年 / 139卷 / 01期

关键词：

FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS;

D O I：

10.1049/ip-j.1992.0016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

III-V integrated circuits associating on one hand a photoconductive detector and on the other hand an MSM photodetector with HIGFETs for optical clock distribution are presented. First, static and dynamic properties of these planar photodetectors are studied, taking into account the main characteristics of their structures (ion implantation for photoconductive detectors and AlxGa1-xAs upper layer with x = 0.45 for MSM photodetectors). Secondly, their integration with a III-V digital IC is reported. This IC includes a divider by two and its operation has been investigated up to 1.2 GHz.

引用

页码：83 / 87

页数：5

共 6 条

[1] ACTIVE MATRIX ADDRESSING OPERATION OF A DYNAMIC OPTICAL NEUROCHIP WITH MONOLITHICALLY INTEGRATED INGAAS/GAAS MSM-FETS
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OHTA, J
TAI, S
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IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) : 617 - 620
[2] 5Gb/s monolithically integrated GaAs MSM/PHEMT 850nm optical receiver front end
School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China
不详
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Pan Tao Ti Hsueh Pao, 2007, 4 (587-591):
[3] Increasing the optical coupling efficiency of planar photodetectors: electron beam writing of an integrated microlens array on top of a MSM device
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KAWANISHI, S
YAMABAYASHI, Y
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[6] Waveguide-integrated Si nano-photodiode with surface-plasmon antenna and its application to on-chip optical clock signal distribution
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