ENHANCEMENT OF LATERAL SOLID-PHASE EPITAXY OVER SIO2 USING A DENSIFIED AND THINNED AMORPHOUS SI LAYER

被引：11
|
作者：
KUSUKAWA, K
MONIWA, M
OHKURA, M
TAKEDA, E
机构：
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期
关键词：
D O I：
10.1063/1.103301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Formation of a thin-film silicon-on-insulator structure by lateral solid phase epitaxy of amorphous Si is described. Thinning of the amorphous Si layer after deposition and densification in an ultrahigh vacuum, prior to solid phase epitaxy, successfully enhances the lateral growth length. In addition, the crystallinity of thin silicon-on-insulator layers formed by this technique is found to be better than that achieved by the conventional method.
引用
收藏
页码：560 / 562
页数：3
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