共 50 条
- [1] MAXIMUM DRIFT VELOCITY OF ELECTRONS IN INDIUM ANTIMONIDE AT 77 degree K. Soviet physics. Semiconductors, 1980, 14 (12): : 1377 - 1380
- [2] INDIUM-ANTIMONIDE DETECTORS OF NUCLEAR RADIATION AT 77 DEGREES K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1175 - 1178
- [3] ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE IRRADIATED BY NEUTRONS AT 77 DEGREES K AND BY ELECTRONS AT 300 DEGREES K SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (09): : 2224 - +
- [4] ON SATURATED DRIFT VELOCITY OF ELECTRONS IN SI FROM 77 DEGREES K TO 500 DEGREES K LETTERE AL NUOVO CIMENTO, 1970, 3 (23): : 728 - +
- [5] ELECTRONS IN LATERAL MICROSTRUCTURES ON INDIUM-ANTIMONIDE SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES, 1989, 206 : 89 - 114
- [6] HOLE TRANSPORT PROPERTIES IN GALLIUM ANTIMONIDE FROM 77-DEGREES-K TO 300-DEGREES-K PHYSICAL REVIEW B, 1979, 19 (06): : 3152 - 3158
- [8] SCATTERING OF ELECTRONS BY ANODIZED SURFACE OF INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 856 - 859