INFLUENCE OF DISLOCATIONS GENERATED BY LASER-RADIATION ON ELECTROPHYSICAL PROPERTIES AND LUMINESCENCE OF P-TYPE CDTE

被引:0
|
作者
BAIDULLAEVA, A
BULAKH, BM
DAULETMURATOV, BK
DZHUMAEV, BR
KORSUNSKAYA, NE
MOZOL, PE
GARYAGDYEV, G
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 05期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An investigation was made of the influence of nanosecond ruby laser radiation pulses with a power density below the thresholds of melting, sublimation, and damage on the dislocation density, as well as on electrical and photoelectric properties of p-type CdTe crystals and on the luminescence emitted from them. A reduction in the conductivity of these crystals after laser irradiation was accompanied by a reduction in the photocurrent and in the luminescence intensity, and was due to multiplication of dislocations as well as migration of Li(Cd) and Na(Cd) acceptors from the bulk to dislocations.
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页码:450 / 452
页数:3
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