LOW-TEMPERATURE (4.2-20.4-DEGREES-K) FIELD GENERATION OF CARRIERS BY LIBERATION FROM SURFACE-STATES IN NORMAL-TYPE GALLIUM-ARSENIDE .1. EXPERIMENTAL RESULTS OBTAINED BY INVESTIGATION OF FIELD GENERATION ON THE SURFACE OF NORMAL-TYPE GAAS

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作者：

SYTENKO, TN

TYAGULSKII, IP

SNITKO, OV

ZIMENKO, VI

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 01期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：82 / 85

页数：4

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[1] LOW-TEMPERATURE (4.2-20.4-DEGREES-K) FIELD GENERATION OF CARRIERS BY LIBERATION FROM SURFACE-STATES IN NORMAL-TYPE GALLIUM-ARSENIDE .2. NATURE OF FIELD GENERATION IN NORMAL-TYPE GAAS
SYTENKO, IN
TYAGULSKII, IP
SNITKO, OV
ZIMENKO, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 86 - 91
[2] LOW-TEMPERATURE (4. 2 - 20. 4 degree K) FIELD GENERATION OF CARRIERS BY LIBERATION FROM SURFACE STATES IN N-TYPE GALLIUM ARSENIDE - 1. EXPERIMENTAL RESULTS OBTAINED BY INVESTIGATION OF FIELD GENERATION ON THE SURFACE OF N-TYPE GaAs.
Sytenko, T.N.
Tyagul'skii, I.P.
Snitko, O.V.
Zimenko, V.I.
Soviet physics. Semiconductors, 1980, 14 (01): : 82 - 85