CONTACTLESS LASER INTERFERENCE METHOD OF NONDESTRUCTIVE CONTROL FOR RECOMBINATION CHARACTERISTICS OF ELECTRONS AND HOLES IN SEMICONDUCTORS

被引：0

作者：

ARESHKIN, AG ^{[1
]}

VOROBIEV, LE ^{[1
]}

IVANOV, AS ^{[1
]}

KOMAROVSKIKH, KF ^{[1
]}

LETENKO, DG ^{[1
]}

FEDORTSOV, AB ^{[1
]}

CHURKIN, YV ^{[1
]}

机构：

[1] ST PETERSBURG STATE TECH UNIV,ST PETERSBURG,RUSSIA

来源：

IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 1992年 / 56卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：121 / 129

页数：9

共 29 条

[1] PHOTOREFRACTIVE METHOD OF CONTACTLESS DETERMINATION OF RECOMBINATION CHARACTERISTICS OF SEMICONDUCTORS
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SEMICONDUCTORS, 1993, 27 (01) : 42 - 45
[2] EXCITONIC RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS
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[3] SEPARATE DETERMINATION OF LIFETIME FOR NONEQUILIBRIUM ELECTRONS AND HOLES IN SEMICONDUCTORS BY THE INTERFERENCE METHOD
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[4] STATISTICAL THEORY OF EXCITON RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS
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[5] RECOMBINATION OF ELECTRONS AND HOLES IN LASER EXCITED GAAS
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[6] STATISTICS OF INTER-IMPURITY RECOMBINATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS
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[7] CONTRIBUTION TO THE STATISTICS OF RECOMBINATION OF ELECTRONS AND HOLES IN IMPURITY CENTERS IN SEMICONDUCTORS
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SOVIET PHYSICS-SOLID STATE, 1961, 3 (02): : 279 - 280
[8] Contactless nondestructive method for determination of the carrier diffusion length in semiconductors and dielectrics
Manukhov, V. V.
Fedortsov, A. B.
18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
[9] AUGER RECOMBINATION IN P-TYPE SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASSES OF ELECTRONS AND HOLES
VOITSEKHOVSKII, AV
LILENKO, YV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (09): : 125 - 127
[10] EXCITON-CATALYZED RECOMBINATION-GENERATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS: A KINETIC APPROACH
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MODERN PHYSICS LETTERS B, 2012, 26 (12):

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