AUGER RECOMBINATION IN HEAVILY DOPED SHALLOW-EMITTER SILICON P-N-JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS

被引：21

|

作者：

SHIBIB, MA

LINDHOLM, FA

FOSSUM, JG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 07期

关键词：

D O I：

10.1109/T-ED.1979.19555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1104 / 1106

页数：3

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