Changes in Hall parameters after gamma-irradiation (Co-60) of n-Ge

Studying the gamma-irradiation influence on the properties of n-type germanium (n-Ge < As >) within the interval of concentrations of the doping arsenic impurity 7.79x10(13) <= N-As equivalent to n(e) <= 6.36 x 10(16) cm(-3 )has shown that the initial resistivity of single crystals with concentrations N (As) >= 5 x 10(15) cm(-3) remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with N-As approximate to 7.79 x 10(13) cm(-3) and less), the used doses of gamma-irradiation cause appreciable reduction both in the carrier concentration n(e) and their mobility mu.