The role of optical phonons in heating electrons by IR radiation in Ge

被引：0

作者：

Poroshin, V. N. ^{[1
]}

Sarbey, O. G. ^{[1
]}

机构：

[1] NAS Ukraine, Inst Phys, 46 Prospect Nauky, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2005年 / 8卷 / 02期

关键词：

many-valley semiconductor; free electron light absorption; carrier heating; intervalley redistribution;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An expression for the coefficient of light absorption by "hot" electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the contribution of such scattering into absorption of a CO2 laser radiation enables to achieve a quantitative agreement between the calculated and experimental values for the intervalley redistribution of electrons due to heating carriers by the light wave in Ge at 300 and 77 K.

引用

页码：1 / 3

页数：3

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