3-PHOTON YIELD OF POSITRON-ANNIHILATION IN CAB-O-SIL (SIO2)

被引：3
|
作者：
HSU, FH [1 ]
SHAO, MJ [1 ]
HULETT, LD [1 ]
ROSSEEL, TM [1 ]
DALE, JM [1 ]
机构：
[1] OAK RIDGE NATL LAB,DIV ANALYT CHEM,OAK RIDGE,TN 37830
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1989年 / 1卷 / 40期
关键词：
D O I：
10.1088/0953-8984/1/40/019
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：7453 / 7456
页数：4
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