POSITRON-ANNIHILATION IN IONIC IMPLANTATED SILICON SINGLE-CRYSTALS

被引：0
|
作者：
DEKHTYAR, IY
SAKHAROVA, SG
机构：
来源：
FIZIKA TVERDOGO TELA | 1978年 / 20卷 / 04期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1082 / 1087
页数：6
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