USING THE C-V CURVE OF AN MIS DIODE TO EXAMINE THE TRAPPING LEVELS IN A SEMICONDUCTOR CONTAINING MANY DISCRETE TRAPS

被引：0
|
作者：
COOK, RK [1 ]
KASOLD, JP [1 ]
JONES, KA [1 ]
机构：
[1] DARTMOUTH COLL, THAYER SCH ENGN, HANOVER, NH 03755 USA
来源：
SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 04期
关键词：
D O I：
10.1016/0038-1101(80)90207-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：391 / 397
页数：7
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