THE OBSERVATION OF THE INTEGRAL QUANTUM HALL-EFFECT IN PBTE/PB1-XEUXTE QUANTUM-WELL STRUCTURES

被引：15
|
作者：
OLVER, MM [1 ]
PASTALAN, JZ [1 ]
ROMAINE, SE [1 ]
GOLDBERG, BB [1 ]
SPRINGHOLZ, G [1 ]
IHNINGER, G [1 ]
BAUER, G [1 ]
机构：
[1] JOHANNES KEPLER UNIV,INST HALBLEITERPHYS,A-4040 LINZ,AUSTRIA
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 08期
基金：
奥地利科学基金会; 美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1098(94)90578-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The observation of the integral quantum Hall effect in narrow band-gap PbTe/Pb1-xEuxTe single and multi quantum well structures grown by molecular beam epitaxy on BaF2 substrates is reported. The transport data prove two-dimensional electron confinement. Measurements show the existence of a parallel 3D conduction channel, due primarily to un-depleted regions of the barrier and buffer material, Pb1-xEuxTe. Repeated thermal cycling causes an increase in carrier density and a degradation in transport due to dislocations induced by the thermal expansion coefficient mismatch between the substrate and IV-VI compound layers.
引用
收藏
页码：693 / 696
页数：4
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