OPTICAL GAIN IN CDSE EPITAXIAL LAYERS ON GAAS

被引：4

作者：

BOGDANOV, SV ^{[1
]}

GRUN, M ^{[1
]}

KALT, H ^{[1
]}

KLINGSHIRN, C ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST MICROELECTR TECHNOL,CHERNOGOLOVKA 142432,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 05期

关键词：

D O I：

10.1016/0038-1098(93)90371-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Stimulated emission and optical gain spectra are observed from wurtzite-type CdSe/CdS/GaAs superstructures grown by hot wall epitaxy. The gain originates predominantly from excitonic scattering processes with maximum gain values of 175 cm-1 and with gain saturation starting at an excitation strip length of 200 mum. The gain is found to be much weaker when the CdSe is directly grown on GaAs substrates without CdS buffer layer.

引用

页码：273 / 275

页数：3

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