TIME-DEPENDENT ANNEALING OF RADIATION-INDUCED LEAKAGE CURRENTS IN MOS DEVICES

被引：24

作者：

TERRELL, JM ^{[1
]}

OLDHAM, TR ^{[1
]}

LELIS, AJ ^{[1
]}

BENEDETTO, JM ^{[1
]}

机构：

[1] HARRY DIAMOND LABS,ADELPHI,MD 20783

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2205 / 2211

页数：7

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