THE EFFECT OF PRESSURE ON THE ELECTRONIC-STRUCTURE AND MAGNETIC-SUSCEPTIBILITY OF EPSILON-FESI

The pressure effect on the magnetic susceptibility of FeSi has been studied in the temperature range 78-300 K. Assuming the leading role of the gap value E(g) as the energy parameter in this range the value d ln E(g)/d ln V = -6 was evaluated. The electronic structure of FeSi was determined using the local spin-density functional approximation and the LMTO method to solve the band structure problem self-consistently. The obtained fine structure of the density of states near the gap differs from the DOS curve for MnSi. The stability of monosilicides is discussed by considering the bonding origin of electronic states near the Fermi energy. The calculated derivative d ln E(g)/d ln V = -5.9 is in agreement with the experimental one.