ATMOSPHERE SENSITIVE CUO/ZNO JUNCTIONS

被引：42

作者：

BAEK, KK ^{[1
]}

TULLER, HL ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

SOLID STATE IONICS | 1995年 / 75卷

关键词：

CUO/ZNO HETEROJUNCTION; COPPER OXIDE; ZINC OXIDE;

D O I：

10.1016/0167-2738(94)00172-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Rectifying CuO/ZnO heterojunctions were successfully fabricated by sputtering thin film p-type CuO onto n-type ZnO polycrystalline substrates. The thermally activated, forward-bias current increased with decreasing oxygen partial pressure pointing to a close correlation between barrier height and adsorbed oxygen at the interface. Both dc I-V and ac impedance measurements were utilized to characterize the deviation from ideality of the characteristics and were found to increase with decreased oxygen partial pressure, (P-O2). An energy band diagram was synthesized and examined in light of the measurements performed in this study.

引用

页码：179 / 186

页数：8

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