STRAIN RELAXATION IN EPITAXIAL-FILMS - FOREWORD

被引：0

作者：

RAJAN, K

FITZGERALD, E

JAGGANADHAM, K

JESSER, W

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

[2] N CAROLINA STATE UNIV, RALEIGH, NC 27695 USA

[3] UNIV VIRGINIA, CHARLOTTESVILLE, VA 22901 USA

来源：

关键词：

D O I：

10.1007/BF02665954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：701 / 701

页数：1

共 50 条

[1] DISLOCATION MECHANISMS OF RELAXATION IN STRAINED EPITAXIAL-FILMS
FREUND, LB
MRS BULLETIN, 1992, 17 (07) : 52 - 60
[2] STRAIN RELAXATION IN ULTRATHIN EPITAXIAL-FILMS OF BETA-FESI2 ON UNSTRAINED AND STRAINED SI(100) SURFACES
PEALE, DR
HAIGHT, R
LEGOUES, FK
THIN SOLID FILMS, 1995, 264 (01) : 28 - 39
[3] STRAIN COMPENSATION BY GE IN B-DOPED SILICON EPITAXIAL-FILMS
MASZARA, WP
THOMPSON, T
JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) : 4477 - 4479
[4] TRANSITION REGIONS IN EPITAXIAL-FILMS
ALEKSANDROV, LN
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01): : 11 - 43
[5] GROWTH OF EPITAXIAL-FILMS BY SPUTTERING
FRANCOMBE, MH
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1976, 31 (183): : 96 - 100
[6] A STUDY OF STRAIN IN THIN EPITAXIAL-FILMS OF YTTRIUM SILICIDE ON SI(111)
SIEGAL, MF
MARTINEZMIRANDA, LJ
SANTIAGOAVILES, JJ
GRAHAM, WR
SIEGAL, MP
JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1517 - 1520
[7] GROWTH OF THIN EPITAXIAL-FILMS
MARKOV, I
ELECTROCHIMICA ACTA, 1983, 28 (07) : 959 - 966
[8] CDTE EPITAXIAL-FILMS AND THEIR PROPERTIES
MAXIMOVSKY, SN
REVOCATOVA, IP
SALMAN, VM
SELEZNEVA, MA
LEBEDEU, PN
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 161 - 165
[9] THE PHOTOSENSIBILITY OF GAAS EPITAXIAL-FILMS
BYEDNYI, BI
KALININ, AN
KARPOVICH, IA
SAVINOV, AN
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (12): : 84 - 85
[10] TWINNING IN BI EPITAXIAL-FILMS
POLYAKOV, SM
LAVERKO, EN
YAGODKIN, VM
KRISTALLOGRAFIYA, 1976, 21 (04): : 863 - &