OBSERVATION OF PERSISTENT PHOTOCONDUCTIVITY IN GAXIN1-XP/INPFE (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.18)

被引：7
|
作者：
ZHAO, YG
ZHAO, G
BREBNER, JL
BENSAADA, A
MASUT, RA
机构：
[1] ECOLE POLYTECH,RECH PHYS & TECHNOL COUCHES MINCES GRP,MONTREAL H3C 3A7,QUEBEC,CANADA
[2] ECOLE POLYTECH,DEPT GENIE PHYS,MONTREAL H3C 3A7,QUEBEC,CANADA
[3] UNIV MONTREAL,DEPT PHYS,MONTREAL H3C 3J7,QUEBEC,CANADA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期
关键词：
D O I：
10.1088/0268-1242/7/11/013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Persistent photoconductivity (PPC) has been observed in GaxIn1-xP/InP: Fe (0 less-than-or-equal-to x < 0.18) in a large temperature range from room temperature down to 77 K. The relationships between PPC and sample structure, material parameters, temperature and excitation time have been experimentally investigated. The results have been explained by the assumption that a macroscopic potential barrier between the film and the substrate separates the charge and thus delays recombination.
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页码：1359 / 1362
页数：4
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