CHEMICAL PRESSURE EFFECTS ON THE KONDO BEHAVIOR OF CEPT2GE2

被引：13
|
作者：
SAMPATHKUMARAN, EV
DAS, I
VIJAYARAGHAVAN, R
机构：
[1] Tata Institute of Fundamental Research, Bombay, 400 005, Homi Bhabha Road, Colaba
来源：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1991年 / 84卷 / 02期
关键词：
D O I：
10.1007/BF01313544
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The compound, CePt2Ge2, recently reported to crystallize in a monoclinic modification of the CaBe2Ge2 structure, has been identified to be an antiferromagnetic Kondo lattice (T(N) = 2.2 K). The influence of positive and negative chemical pressure on the Kondo behavior is investigated by measurements of magnetic susceptibility and electrical resistivity (rho) on the solid solutions, Ce(1-x)La(x)Pt2Ge2 and Ce(1-z)Y(z)Pt2Ge2. Y and La substituents cause nearly similar effects on the magnetic and electrical resistivity behaviour of CePt2Ge2, though the unit-cell volumes vary in opposite directions. We propose that the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction may contribute to decide the temperature at which rho-attains a maximum at low temperatures (approximately 5 K) in CePt2Ge2.
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页码：247 / 250
页数：4
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