THE ELECTRONIC-PROPERTIES OF SILICON-NITRIDE

被引:94
|
作者
ROBERTSON, J
机构
关键词
D O I
10.1080/01418638108222558
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:215 / 237
页数:23
相关论文
共 50 条
  • [1] EFFECTS OF SILICON-NITRIDE FILMS ON THE ELECTRONIC-PROPERTIES OF SI-SIO2 INTERFACES
    KAMADA, M
    YAGI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (12): : 1684 - 1688
  • [2] SYNTHESIS OF SILICON-NITRIDE AND PROPERTIES OF SILICON-NITRIDE SHAPES
    MUKERJI, J
    DHARGUPTA, KK
    BISWAS, SK
    [J]. INDIAN JOURNAL OF TECHNOLOGY, 1978, 16 (04): : 156 - 160
  • [3] ELECTRONIC-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY LOW-ENERGY ION-BEAM BOMBARDMENT
    REN, ZM
    LU, F
    DU, YC
    YING, ZF
    LI, FM
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (06): : 643 - 644
  • [4] ELECTRONIC PROCESSES IN SILICON-NITRIDE
    MANZINI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3278 - 3284
  • [5] ELECTRONIC-STRUCTURE OF SILICON-NITRIDE
    SOKEL, R
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 467 - 467
  • [6] ELECTRONIC-STRUCTURE OF SILICON-NITRIDE
    ROBERTSON, J
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01): : 47 - 77
  • [7] THE ELECTRONIC-STRUCTURE OF SILICON-NITRIDE
    SOKEL, RJ
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (08) : 899 - 906
  • [8] PROPERTIES OF TETRACHLORIDE SILICON-NITRIDE
    GOLOD, IA
    DEVYATOVA, SF
    ERKOV, VG
    KHRAMOVA, LV
    [J]. KHIMICHESKAYA FIZIKA, 1992, 11 (12): : 1687 - 1693
  • [9] OPTICAL PROPERTIES OF SILICON-NITRIDE
    PHILIPP, HR
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (02) : 295 - 300
  • [10] SILICON-NITRIDE - SYNTHESIS AND PROPERTIES
    ANDRIEVSKII, RA
    [J]. USPEKHI KHIMII, 1995, 64 (04) : 311 - 329