EPITAXIAL GROWTH OF VO SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES

被引：4
|
作者：
TAKEI, H
KOIDE, S
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1968年 / 24卷 / 06期
关键词：
D O I：
10.1143/JPSJ.24.1394
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1394 / +
页数：1
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