OBSERVATIONS OF CHANNELS OF MOS FIELD EFFECT TRANSISTORS USING A SCANNING-ELECTRON MICROSCOPE

被引：8

|

作者：

HIGUCHI, H

MAKI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 12期

关键词：

D O I：

10.1143/JJAP.4.1021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1021 / &

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