MINORITY-CARRIER LIFETIME OF III-V COMPOUND SEMICONDUCTORS

被引：0
|
作者：
AHRENKIEL, RK
机构：
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The status of minority-carrier lifetime improvement in popular III-V materials will be reviewed. The most important recombination mechanisms in semiconductors including GaAs, AlxGa1-xAs, InP, and GaInP will be discussed.
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页码：685 / 690
页数：6
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