THE EFFECT OF BASE GRADING ON THE GAIN AND HIGH-FREQUENCY PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：39

|

作者：

HO, SCM

PULFREY, DL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2173 / 2182

页数：10

相关论文

共 50 条

[1] HIGH-FREQUENCY POWER ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
CAMPS, T
BAILBE, JP
MARTY, A
TASSELLI, J
CAZARRE, A
[J]. ELECTRONICS LETTERS, 1992, 28 (15) : 1444 - 1445
[2] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ITO, H
ISHIBASHI, T
SUGETA, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 214 - 216
[3] HIGH-FREQUENCY PERFORMANCE OF MOVPE NPN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ENQUIST, PM
HUTCHBY, JA
CHANG, MF
ASBECK, PM
SHENG, NH
HIGGINS, JA
[J]. ELECTRONICS LETTERS, 1989, 25 (17) : 1124 - 1125
[4] REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE
FISCHER, R
MORKOC, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 359 - 362
[5] HIGH-FREQUENCY ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - THE ROLE OF MOVPE
PACKEISER, G
TEWS, H
ZWICKNAGL, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 883 - 892
[6] HIGH-FREQUENCY OUTPUT CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
CHEN, J
GAO, GB
UNLU, MS
MORKOC, H
[J]. ELECTRONICS LETTERS, 1990, 26 (25) : 2058 - 2060
[7] HIGH-FREQUENCY PERFORMANCE OF ALGAAS/INGAAS/GAAS STRAINED LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS
SULLIVAN, GJ
ASBECK, PM
CHANG, MF
MILLER, DL
WANG, KC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1845 - 1846
[8] EFFECT OF EMITTER-BASE SPACING ON THE CURRENT GAIN OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
LEE, WS
UEDA, D
MA, T
PAO, YC
HARRIS, JS
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 200 - 202
[9] EFFECT OF BASE DOPING GRADIENTS ON THE ELECTRICAL PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
MOHAMMAD, SN
CHEN, J
CHYI, JI
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (05) : 463 - 465
[10] ORIENTATION EFFECT ON ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ISHIDA, H
UEDA, D
[J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) : 448 - 450

← 1 2 3 4 5 →