ALL-OPTICAL SWITCHING IN A NONLINEAR GAALAS X-JUNCTION

被引：42
|
作者：
AITCHISON, JS [1 ]
VILLENEUVE, A [1 ]
STEGEMAN, GI [1 ]
机构：
[1] UNIV CENT FLORIDA,CTR RES ELECTROOPT & LASERS,ORLANDO,FL 32826
来源：
OPTICS LETTERS | 1993年 / 18卷 / 14期
关键词：
Laser pulses - Optical communication - Semiconducting gallium compounds;
D O I：
10.1364/OL.18.001153
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate femtosecond all-optical switching in both symmetric and asymmetric nonlinear X junctions, fabricated in AlGaAs channel waveguides at 1555 nm with photon energies below one half the semiconductor band gap. The switching is a consequence of optically induced symmetry breaking within the junction.
引用
收藏
页码：1153 / 1155
页数：3
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