共 18 条
- [2] ANNEALING OF DIVACANCIES IN SILICON IRRADIATED WITH FAST-NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 354 - 356
- [3] CORRECTION OF INTERFERENCES BY FAST-NEUTRONS FOR DETERMINATION OF SODIUM IN SILICON JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES, 1988, 121 (01): : 3 - 8
- [4] PHOTOCONDUCTIVITY OF ZNXCD1-XS SINGLE-CRYSTALS IRRADIATED WITH FAST-NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1330 - 1331
- [5] LUMINESCENCE AND OPTICAL PROPERTIES OF SILICON-CARBIDE IRRADIATED WITH FAST-NEUTRONS SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (08): : 1974 - +
- [6] POSITRON STATES IN P-TYPE SILICON IRRADIATED WITH FAST-NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1414 - 1415
- [8] DETERMINATION OF FLUORINE, SILICON AND IRON IN RARE-EARTH CONCENTRATES BY METHOD OF ACTIVATION WITH FAST-NEUTRONS ZHURNAL ANALITICHESKOI KHIMII, 1973, 28 (06): : 1225 - 1227
- [10] EFFECT ON CHARGE COLLECTION AND STRUCTURE OF N-TYPE SILICON DETECTORS IRRADIATED WITH LARGE FLUENCES OF FAST-NEUTRONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 343 (2-3): : 435 - 440