DEEP-LEVEL DOMINATED CURRENT VOLTAGE CHARACTERISTICS OF BURIED IMPLANTED OXIDE SILICON-ON-INSULATOR

被引：8
|
作者：
DAS, K
PALMOUR, JW
POSTHILL, JB
HUMPHREYS, TP
OSULLIVANFRENCH, J
BYRD, NJ
LU, D
WORTMAN, JJ
PARIKH, NR
机构：
[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599
[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期
关键词：
D O I：
10.1109/55.31693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：135 / 137
页数：3
相关论文
共 50 条
  • [1] THE CHARACTERISTICS OF CMOS DEVICES IN OXYGEN IMPLANTED SILICON-ON-INSULATOR - THE INFLUENCE OF THE MICROSTRUCTURE AT SILICON BURIED OXIDE INTERFACE
    MAO, BY
    CHEN, CE
    SUNDARESAN, R
    POLLACK, G
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A11 - A11
  • [2] Interface states and deep-level centers in silicon-on-insulator structures
    I. V. Antonova
    J. Stano
    D. V. Nikolaev
    O. V. Naumova
    V. P. Popov
    V. A. Skuratov
    [J]. Semiconductors, 2001, 35 : 912 - 917
  • [3] Interface states and deep-level centers in silicon-on-insulator structures
    Antonova, IV
    Stano, J
    Nikolaev, DV
    Naumova, OV
    Popov, VP
    Skuratov, VA
    [J]. SEMICONDUCTORS, 2001, 35 (08) : 912 - 917
  • [4] Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide
    Potter, Kenneth
    Morgan, Katrina
    Shaw, Chris
    Ashburn, Peter
    Redman-White, William
    De Groot, C. H.
    [J]. MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 2339 - 2343
  • [5] TOTAL DOSE HARDENING OF BURIED INSULATOR IN IMPLANTED SILICON-ON-INSULATOR STRUCTURES
    MAO, BY
    CHEN, CE
    POLLACK, G
    HUGHES, HL
    DAVIS, GE
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1692 - 1697
  • [6] EVALUATION OF BONDING SILICON-ON-INSULATOR FILMS WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS
    USAMI, A
    NATORI, T
    ITO, A
    ISHIGAMI, S
    TOKUDA, Y
    WADA, T
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (09) : 1049 - 1055
  • [7] Dose dependence of microstructural development of buried oxide in oxygen implanted silicon-on-insulator material
    Bagchi, S
    Krause, SJ
    Roitman, P
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2136 - 2138
  • [8] AN INVESTIGATION OF ANOMALOUS CURRENT-VOLTAGE CHARACTERISTICS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    LIU, PS
    LIU, GT
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1410 - 1416
  • [9] Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide
    郑中山
    刘忠立
    于芳
    李宁
    [J]. Chinese Physics B, 2012, (11) : 363 - 368
  • [10] Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide
    Zheng Zhong-Shan
    Liu Zhong-Li
    Yu Fang
    Li Ning
    [J]. CHINESE PHYSICS B, 2012, 21 (11)
12345