共 50 条
- [1] CONCENTRATION AND TEMPERATURE DEPENDENCE OF IMPURITY-TO-BAND ACTIVATION-ENERGIES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 408 - +
- [3] IMPURITY-TO-BAND TUNNELING IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5476 - 5478
- [4] BORON CONCENTRATION AND IMPURITY-TO-BAND ACTIVATION-ENERGY IN DIAMOND [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (01): : 293 - 298
- [6] CONCENTRATION AND TEMPERATURE DEPENDENCE OF IMPURITY ACTIVATION ENERGIES IN GAP [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (01): : 141 - &
- [7] CONCENTRATION-DEPENDENCE OF ACTIVATION FREE-ENERGIES IN ELECTROLYTE DIFFUSION [J]. TRANSACTIONS-AMERICAN GEOPHYSICAL UNION, 1977, 58 (06): : 539 - 539
- [8] Impurity-to-band activation energy in phosphorus doped diamond [J]. 1600, American Institute of Physics Inc. (114):