DOWN-CONVERTERS USING SCHOTTKY-BARRIER DIODES

被引：5

作者：

LIECHTI, CA

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1970.17110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：975 / &

共 50 条

[1] DOWN CONVERSION BY MEANS OF SCHOTTKY-BARRIER DIODES
BUCHS, JD
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1972, 25 (07): : 305 - +
[2] SCHOTTKY-BARRIER DIODES
ADAMS, AR
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (10): : 958 - &
[3] SUBMILLIMETER DETECTORS USING SCHOTTKY-BARRIER DIODES
AVERIN, SV
POPOV, VA
RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (05): : 1057 - 1061
[4] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
EGLASH, SJ
NEWMAN, N
PAN, S
MO, D
SHENAI, K
SPICER, WE
PONCE, FA
COLLINS, DM
JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
[5] CONVERSION LOSS OF SCHOTTKY DIODE MICROWAVE DOWN-CONVERTERS
MORINO, A
SUGANO, T
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 54 (03): : 68 - &
[6] COMMENT ON ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
HORVATH, ZJ
JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 443 - 444
[7] RECIPROCITY IN SILICON SCHOTTKY-BARRIER DIODES
ANAND, Y
DOHERTY, WE
ELECTRONICS LETTERS, 1967, 3 (06) : 236 - &
[8] METAL POLYACETYLENE SCHOTTKY-BARRIER DIODES
KANICKI, J
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1984, 105 (1-4): : 203 - 217
[9] TRANSIENT ANALYSIS OF SCHOTTKY-BARRIER DIODES
MCCOWEN, A
SHAARI, SBH
BOARD, K
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (03): : 71 - 75
[10] GAAS SCHOTTKY-BARRIER AVALANCHE DIODES
KIM, CK
ARMSTRON.LD
SOLID-STATE ELECTRONICS, 1970, 13 (01) : 53 - &