ELECTRON-RELAXATION EFFECTS IN TRANSFERRED-ELECTRON DEVICES REVEALED BY NEW SIMULATION METHOD

被引：31

|

作者：

JONES, D

REES, HD

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 14期

关键词：

D O I：

10.1049/el:19720265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：363 / &

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