SOLUBILITY AND DIFFUSION-COEFFICIENT OF ELECTRICALLY ACTIVE TITANIUM IN SILICON

The deep impurity levels and the solubility of titanium in silicon have been investigated by deep level transient spectroscopy (DLTS). It is found that titanium forms multilevels with an acceptor level of E(c) - 0.09 V, a donor level of E(c) - 0.27 eV and a double-donor level of E(v) + 0.28 eV. The solubilities as a function of reciprocal absolute temperature show a good straight line with the activation energy of 3.8 eV. The diffusion coefficient is determined in the high temperature range 1050-1150-degrees-C and in the lower range 600-800-degrees-C. The diffusion coefficient is represented by D(Ti) = 1.2 x 10(-1) exp (- 2.05/kT) cm2 s-1.