B-DOPING USING B2H6 IN GAS SOURCE SI MOLECULAR-BEAM EPITAXY

被引：8
|
作者：
HIRAYAMA, H [1 ]
HIROI, M [1 ]
KOYAMA, K [1 ]
机构：
[1] NEC CORP LTD,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期
关键词：
D O I：
10.1063/1.105042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new gas mixing system was devised for the control of a gaseous dopant during gas source Si molecular beam epitaxy. The performance of this gas mixing system was demonstrated using B2H6 gas dopant for B doping. B doping level control over five decades was successfully achieved. The B-doping concentration was found to be proportional to the B2H6/Si2H6 flow rate ratio. This relationship holds in both the supply-controlled and the reaction-controlled growth regions. This result indicates that B2H6 is incorporated into epitaxial layers by a similar dissociative adsorption mechanism on Si2H6.
引用
收藏
页码：1991 / 1993
页数：3
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