INVESTIGATIONS OF THICK-FILM RESISTORS WITH HIGH GAUGE FACTORS

被引：0
|
作者：
HROVAT, M
BELAVIC, D
DRAZIC, G
HOLC, J
SOBA, S
机构：
[1] UNIV LJUBLJANA, JOZEF STEFAN INST, LJUBLJANA 61111, SLOVENIA
[2] HIPOT HYBRID, SHENTJUR 68310, SLOVENIA
来源：
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 1995年 / 25卷 / 02期
关键词：
THICK FILM RESISTORS; GAUGE FACTORS; GF; TEM; TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURES; RUO2 RUTHENIUM OXIDE; IMPEDANCE ANALYSIS; TEMPERATURE COEFFICIENT OF RESISTIVITY; TCR; BI2RU2O7;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gauge factors (GF) of thick film materials are higher than those of thin metal films acid lower than those of semiconductors. Due to their stability and the low temperature coefficient of resistivity (TCR) of thick film materials strain gauges realised in thick film technology offer advantages in some applications over both metal film (low GF, low TCR) and semiconducting elements (hip GF, high TCR).
引用
收藏
页码：108 / 114
页数：7
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