共 50 条
- [1] INFLUENCE OF THE INTENSITY OF ELECTRON-IRRADIATION ON THE FORMATION OF DEFECTS IN INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1277 - 1280
- [2] INFLUENCE OF PROTON IRRADIATION ON PROPERTIES OF INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 234 - 235
- [4] EFFECTS OF PULSED IRRADIATION WITH SUBTHRESHOLD-ENERGY ELECTRONS ON ELECTRICAL-PROPERTIES OF INDIUM-ANTIMONIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 483 - 484
- [5] RECOMBINATION PROPERTIES OF CHROMIUM-DOPED INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 1023 - 1024
- [6] ANISOTROPY OF ELECTRICAL-PROPERTIES OF UNIAXIALLY COMPRESSED INDIUM-ANTIMONIDE AT 4.2-DEGREES-K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 583 - 584
- [8] INFLUENCE OF ELECTRON-IRRADIATION ON ELECTRICAL-PROPERTIES OF SILICON DIFFUSION-DOPED WITH MANGANESE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 921 - 921
- [9] RADIATIVE RECOMBINATION WITH AN ENERGY DEFICIT IN INDIUM-ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 756 - 759