INVESTIGATION OF THE TYPE INVERSION PHENOMENA - RESISTIVITY AND CARRIER MOBILITY IN THE SPACE-CHARGE REGION AND ELECTRICAL NEUTRAL BULK IN NEUTRON-IRRADIATED SILICON P+-N JUNCTION DETECTORS

The changes of effective dopant concentration in the space-charge region (SCR) of neutron irradiated silicon detectors have been investigated near the type inversion point. In addition to the conventional capacitance-voltage(C-V) measurements, transient current technique(TCT) using a laser light excitation which is absorbed within 10 mum of silicon was also applied. The details of transient current response in irradiated silicon detectors are discussed, which gave the possibility for determining the effective dopant concentration in the SCR as well as properties in the electrical neutral bulk(ENB) of silicon detectors.