COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA

被引：0
|
作者：
SCHWARTZ, GC [1 ]
ZIELINSKI, LB [1 ]
SCHOPEN, TS [1 ]
机构：
[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C285 / C285
页数：1
相关论文
共 50 条
  • [1] COMPETITIVE MECHANISMS IN REACTIVE ION ETCHING IN A CF4 PLASMA
    SCHWARTZ, GC
    ROTHMAN, LB
    SCHOPEN, TJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 464 - 469
  • [2] MECHANISMS OF SILICON ETCHING BY CF4 PLASMA
    MAUER, JL
    LOGAN, JS
    ZIELINSKI, LB
    SCHWARTZ, GC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 333 - 333
  • [3] REACTIVE ION ETCHING OF SI4N4 IN CF4 PLASMA
    BRCKA, J
    HARMAN, R
    [J]. ACTA PHYSICA SLOVACA, 1987, 37 (02) : 93 - 97
  • [4] TUNGSTEN ETCHING MECHANISMS IN CF4/O-2 REACTIVE ION ETCHING PLASMAS
    BESTWICK, TD
    OEHRLEIN, GS
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 5034 - 5038
  • [5] Reactive ion etching of CoSi2 in a CF4/Ar plasma
    Beddies, G
    Falke, M
    Teichert, S
    Gebhardt, B
    Hinneberg, HJ
    [J]. APPLIED SURFACE SCIENCE, 1999, 138 : 370 - 375
  • [6] EFFECT OF CATHODE MATERIALS ON REACTIVE ION ETCHING OF SILICON AND SILICON DIOXIDE IN A CF4 PLASMA
    EPHRATH, LM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) : 415 - 428
  • [7] Reactive-ion-etching (RIE) process in CF4 plasma as a method of fluorine implantation
    Kalisz, Malgorzata
    Beek, R. B.
    Cwil, M.
    [J]. VACUUM, 2008, 82 (10) : 1046 - 1050
  • [8] CHARACTERISTICS OF CF4 PLASMA ETCHING
    JINNO, K
    MATSUMOTO, Y
    INOMATA, S
    [J]. DENKI KAGAKU, 1976, 44 (03): : 204 - 210
  • [9] REACTIVE ION ETCHING CHARACTERIZATION OF A-SIC-H IN CF4/O-2 PLASMA
    SAGGIO, G
    VERONA, E
    DIROSA, P
    LAMONICA, S
    SALOTTI, R
    SCHIRONE, L
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 176 - 180
  • [10] Reactive Ion Etching of ITO Transparent Electrode of TFT-AMLCD in Ar/CF4 Plasma
    El Hassane OULACHGAR
    [J]. Semiconductor Photonics and Technology, 1998, (03) : 55 - 59
12345