EFFECT OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF NB/AL-OXIDE/NB TUNNEL-JUNCTIONS

被引：16
|
作者：
MALLISON, WH
MILLER, RE
KLEINSASSER, AW
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期
关键词：
D O I：
10.1109/77.403052
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the dependence of the critical current density J(c) of Nb/AlOx/Nb Josephson tunnel junctions on substrate temperature T-s and oxygen exposure E (the product of oxidation time and pressure) during growth. For low O-2 exposures, J(c) depended sensitively on exposure, J(c) proportional to E(-1.6), independent of temperature for 77 K < T-s < 420 K. For high O-2 exposures, J(c) depended strongly on temperature, with a weaker dependence on exposure: For T-s = 290 K, J(c) proportional to E(-0.4), while for T-s = 77 K, J(c) was independent of exposure.
引用
收藏
页码：2330 / 2333
页数：4
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