TWINNING AND THE FORMATION OF THE DIAMOND HEXAGONAL PHASE IN SI-GE SHORT-PERIOD SUPERLATTICES

被引：6
|
作者：
DYNNA, M [1 ]
WEATHERLY, GC [1 ]
机构：
[1] MCMASTER UNIV,DEPT MAT SCI & ENGN,HAMILTON L8S 4M1,ONTARIO,CANADA
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 142卷 / 3-4期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1016/0022-0248(94)90338-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structure of as-grown and thermally annealed (Si17.5Ge7)8 atomic layer superlattices has been studied by cross-sectional and plan view transmission electron microscopy. The as-grown structure contains twins and small clusters identified as the diamond hexagonal phase. The volume fraction of twins and the diamond hexagonal phase increase on annealing at 700-degrees-C as the stresses in the structure are relaxed. The formation of the diamond hexagonal phase is thought to occur at twin-twin intersections, as previously reported in the literature for Si and Ge subjected to high stresses during indentation testing.
引用
收藏
页码：315 / 321
页数：7
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