CHARACTERISTICS OF ELECTROPHYSICAL AND PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE SINGLE-CRYSTALS SUBJECTED TO LASER IRRADIATION

被引：0

作者：

VIRT, IS

LYUBCHENKO, AV

MOZOL, PE

GNATYUK, VA

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来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 08期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：862 / 864

页数：3

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[1] PHOTOELECTRIC AND NOISE PROPERTIES OF PLASTICALLY DEFORMED CDXHG1-XTE SINGLE-CRYSTALS
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[2] IMPURITY DEFECTS IN CDXHG1-XTE SINGLE-CRYSTALS
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[3] INFLUENCE OF FLUCTUATIONS OF THE COMPOSITION ON THE PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE SOLID-SOLUTION SINGLE-CRYSTALS
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[4] GAMMA-IRRADIATION EFFECT ON ELECTRIC AND PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE CRYSTALS
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[5] SOLID-PHASE LASER DOPING OF CDXHG1-XTE SINGLE-CRYSTALS
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[6] ELECTROPHYSICAL PROPERTIES OF CDXHG1-XTE SUBJECTED TO ION-BEAM ETCHING
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[7] INFLUENCE OF STRUCTURE CHARACTERISTICS OF EPITAXIAL CDXHG1-XTE FILMS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES AFTER LASER IRRADIATION
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[8] ELECTROPHYSICAL PROPERTIES OF IRRADIATED N-TYPE CDXHG1-XTE SINGLE-CRYSTALS IN STRONG ELECTRIC-FIELDS
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[9] GROWTH AND PROPERTIES OF CDXHG1-XTE CRYSTALS
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[10] Surface properties of CdxHg1-xTe crystals
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